| abstract |
In accordance with the present invention, an apparatus for growing high aspect ratio emitters 26 on a substrate 13 is provided. The apparatus includes a housing 10 defining a chamber and includes a substrate holder 12 attached to the housing and disposed within the chamber to support a substrate having a surface for growing high aspect ratio emitters 26. Include. The heating element 17 is disposed near the substrate and is at least one material selected from the group consisting of carbon, conductive cermets, and conductive ceramics. The housing defines an opening 15 into the chamber to receive gas into the chamber to form high aspect ratio emitters 26.n n n n Aspect Ratio, Chamber, Housing, Board Holder, Heating Element |