http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100927148-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-422 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2002-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2009-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100927148-B1 |
| titleOfInvention | Photoresist residue removal composition |
| abstract | In the manufacturing process of a semiconductor circuit element, the photoresist residue removal liquid composition which is excellent in the removal property of the photoresist residue which remains after dry etching, and does not attack a wiring material, an interlayer insulation film, etc. is provided.n n n A photoresist residue removal liquid composition comprising one or two or more selected from the group consisting of aliphatic polycarboxylic acids and salts thereof, and one or two or more selected from the group consisting of reducing compounds and salts thereof. |
| priorityDate | 2001-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 64.