http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100927080-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3063 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2006-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2009-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100927080-B1 |
| titleOfInvention | Etching liquid of a substrate including a WPS film and a SOD film |
| abstract | The present invention relates to an etching solution for etching both the vinylated BPSG film and the thermal oxide film of an ultrafine device manufactured by a low temperature process, and the vinylated SOD film and the thermal oxide film at a constant speed or a speed thereof. And an etching treatment. Specifically, at least one salt selected from the group consisting of a fluoride salt and a heavy fluoride salt, an organic solvent having a hetero atom, a thermal oxide film (THOX), a vinylated BPSG (boron phosphorus glass) film, The etch rate of the vinylated spin on dielectric (SOD) film was 100 μs / min or less at 23 ° C., and also the etch rate ratio with the vinylated BPSG film / thermal oxide film, and the vinylated SOD film / thermal oxide film; The etching liquid of which the etching rate ratio of all is three or less is provided. |
| priorityDate | 2005-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 83.