http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100926403-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78645 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2007-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2009-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100926403-B1 |
| titleOfInvention | Thin film transistor |
| abstract | A thin film transistor capable of suppressing not only the kink effect but also the channel length modulation effect is realized.n n n In the first and second gate electrodes 6a and 6b constituting the gate electrode 6, the gate length W6b of the second gate electrode 6b is shorter than the gate length W6a of the first gate electrode 6a, and Further, the gate length W6b of the second gate electrode 6b is configured to be short enough to cause a short channel effect. Accordingly, the threshold voltage Vthb of the second transistor corresponding to the second gate electrode 6b can be lower than the threshold voltage Vtha of the first transistor corresponding to the first gate electrode 6a. When the same voltage is applied to the first and second gate electrodes 6a and 6b, the concentration of the electric field at the channel end on the drain side is suppressed. As a result, the channel length modulation effect can be alleviated. |
| priorityDate | 2006-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.