| abstract |
According to one embodiment, a stress buffer 40 is formed between the power metal structure 90 and the passivation layer 30. This stress buffer 40 reduces the effect of the stress imparted to the passivation layer 30 by the power metal structure 90. According to another embodiment, the power metal structure 130A is divided into segments 1091, thereby between the segments 1090 by the seed layer 1052 and the remaining portions of the adhesion / barrier layer 1050. Electrical continuity is maintained. Individual segments 1090 impart lower peak stresses than continuous power metal structures 9 of comparable size.n n n n Semiconductor devices, stress buffers, power metal structures, passivation layers, segments. |