| abstract |
The present invention mainly provides a method for producing a crystalline metal oxide thin film by depositing a metal oxide film mainly made of amorphous, and then exposing it to a low temperature plasma in a high frequency electric field at a temperature of 180 ° C. or lower as a post treatment, and the crystalline metal produced by the method. Provide an oxide thin film. According to this manufacturing method, since it is possible to form a dense and homogeneous crystalline metal oxide thin film on the substrate at low temperature without active heat treatment, even a substrate having a relatively low heat resistance without impairing the characteristics of the substrate is desirable characteristics. The metal oxide thin film can be formed.n n n n Film deposition, metal oxide thin film, plasma, amorphous, crystalline |