http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100918190-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3232 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5445 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5436 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-662 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-77 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-581 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-581 |
| filingDate | 2005-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2009-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100918190-B1 |
| titleOfInvention | Density aluminum nitride sintered body, its manufacturing method, and member for semiconductor manufacture using the said sintered body |
| abstract | In the present invention, the ratio of the diffraction peak strength of titanium nitride to the diffraction peak strength of aluminum nitride is 0.1 to 20%, and the ratio of the diffraction peak strength of magnesium aluminate (spinel) to the diffraction peak strength of aluminum nitride is 0.1 to 10%. It provides a dense aluminum nitride sintered compact, its manufacturing method, and the member for semiconductor manufacture using the said sintered compact which are%, volume resistivity at room temperature is 1x10 < 15> Pa * cm or more, and a relative density is 99% or more. In the present invention, the powder for aluminum nitride sintered body before sintering comprises 0.1 to 15 wt% of yttrium oxide, 0.01 to 5 wt% of titanium oxide, and 0.1 to 10 wt% of magnesium oxide, and the volume resistivity at room temperature after sintering is 1 × 10 15 kPa. Provided are a dense aluminum nitride sintered compact, a method for producing the same, and a semiconductor manufacturing member using the sintered compact, wherein the compact aluminum nitride has a relative density of 99% or greater. The dense aluminum nitride sintered body according to the present invention has excellent leakage current characteristics, sufficient adsorption power, good desorption characteristics, and excellent thermal conductivity, and thus can be applied to a semiconductor manufacturing member that requires high volume resistivity, such as a coulomb type electrostatic chuck.n n n n Aluminum nitride sintered body, volume resistivity, relative density, coulomb type electrostatic chuck, titanium nitride, spinel |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180126142-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102081622-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101217253-B1 |
| priorityDate | 2005-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.