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filingDate 2006-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2009-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2009-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100918168-B1
titleOfInvention SNS-based limited reprogrammable cells
abstract The present invention provides a method and apparatus for providing a memory device programmable for a limited number of times. According to an exemplary embodiment, a memory device and a method of forming the same provide a first electrode, a second electrode, and a layer of chalcogenide or a germanium containing layer between the first electrode and the second electrode. The memory device further includes a tin-chalcogenide layer between the chalcogenide or germanium containing layer and the second electrode.
priorityDate 2005-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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