Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2013-009 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8825 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0011 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-00 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-02 |
filingDate |
2006-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2009-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2009-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-100918168-B1 |
titleOfInvention |
SNS-based limited reprogrammable cells |
abstract |
The present invention provides a method and apparatus for providing a memory device programmable for a limited number of times. According to an exemplary embodiment, a memory device and a method of forming the same provide a first electrode, a second electrode, and a layer of chalcogenide or a germanium containing layer between the first electrode and the second electrode. The memory device further includes a tin-chalcogenide layer between the chalcogenide or germanium containing layer and the second electrode. |
priorityDate |
2005-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |