http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100917087-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-00 |
| filingDate | 2001-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2009-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100917087-B1 |
| titleOfInvention | Nitrogen-doped silicon with virtually no oxidation-induced lamination flaws |
| abstract | The present invention relates to a single crystal silicon, ingot or wafer form, wherein the bacones are major intrinsic point defects, are substantially free of oxide deposit defects, and have axisymmetric regions doped with nitrogen to stabilize the oxygen precipitated nucleus therein, and the process of making them. It's about.n n n n Single crystal silicon, epitaxial layer, baconic defect, axisymmetric region, oxygen concentration, nitrogen concentration, nitrogen doping |
| priorityDate | 2000-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.