http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100912961-B1

Outgoing Links

Predicate Object
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66825
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
filingDate 2006-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2009-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2009-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100912961-B1
titleOfInvention Device Separating Method of Semiconductor Device
abstract The present invention prevents the loss of the insulating film for the device isolation film that protects the sidewalls of the gate insulating film during the device isolation film forming process of the semiconductor device to form a device isolation film of the semiconductor device that can improve the cycling characteristics and reliability of the device The present invention provides a method for forming a gate insulating film, a gate conductive film, and a pad nitride film on a substrate, and etching the pad nitride film, the gate conductive film, the gate insulating film, and a portion of the substrate. Forming a trench, sequentially forming a first insulating film and a second insulating film for a device isolation layer embedded in the trench, and performing a wet etching process using an etching solution having a different concentration. Recessing a second insulating film, and filling the second trench with the second insulating film; Forming a third insulating film for a device isolation film, removing the pad nitride film, and recessing the first and third insulating films to a predetermined depth. do.n n n n SOD, PSZ, device separator, wet etching process, etching solution, concentration
priorityDate 2006-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20020004729-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002208629-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060037823-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069

Total number of triples: 15.