http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100912154-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3259 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B2005-3996 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F41-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B5-3163 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R33-093 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B5-3909 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3272 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F41-303 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B5-3929 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y25-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C17-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3281 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01C17-00 |
| filingDate | 2007-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2009-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100912154-B1 |
| titleOfInvention | Method of manufacturing magnetoresistive effect element |
| abstract | A method of manufacturing a magnetoresistive element in which a magnetization fixing layer, a nonmagnetic intermediate layer, and a magnetization free layer are sequentially stacked is disclosed. The method comprises the steps of forming at least a portion of a magnetic layer that will be either of the magnetization anchor layer and the magnetization free layer; Forming a functional layer on at least a portion of the magnetic layer, the functional layer comprising at least one of oxide, nitride, and fluoride; Removing a portion of the functional layer by exposing the functional layer to either ion beam or plasma irradiation.n n n n Magnetoresistive element, Current-In-Plane-Giant-Magnetoresistance (CIP-GMR), Tunneling Magnetoresistance (TMR), Current-Perpendicular-to-Plane (GPP), Half metal (half metal) |
| priorityDate | 2006-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.