http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100912111-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-098 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-095 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-098 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-095 |
| filingDate | 2007-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2009-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100912111-B1 |
| titleOfInvention | Schottky Barrier Nanowire Field Effect Transistors and Manufacturing Method Thereof |
| abstract | The present invention relates to a Schottky Barrier Nano Wire Field Effect Transistor using a source and a drain electrode made of metal silicide and using nanowires as a channel, and a method of manufacturing the same. A channel suspended from the substrate and formed of nanowires; Source and drain electrodes electrically connected to both ends of the channel and formed of metal silicide on the substrate; A Schottky barrier nanowire field effect transistor comprising a gate electrode provided in a form surrounding the channel and a gate insulating film formed between the channel and the gate electrode.n n n n n Nanowires, Carbon Nanotubes, Metal Silicides, Transistors, Schottky Barriers |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101513123-B1 |
| priorityDate | 2006-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 61.