http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100906502-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-16 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-04 |
| filingDate | 2008-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2009-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100906502-B1 |
| titleOfInvention | Etch solution with improved etching selectivity relative to silicon oxide film compared to metal silicide film |
| abstract | An etching solution is provided, wherein the etching selectivity of the silicon oxide film relative to the metal silicide film is improved. The wet etching solution according to the present invention includes 0.1 to 10 parts by weight of hydrogen fluoride, 0.1 to 10 parts by weight of ammonium fluoride, 30 to 50 parts by weight of an organic acid compound having at least one carboxyl group, 30 to 50 parts by weight of alcohols, and water. .n n n Silicon oxide film, metal silicide film, selectivity, organic acid compound |
| priorityDate | 2008-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.