http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100900224-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28052 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76841 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32055 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate | 2006-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2009-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100900224-B1 |
| titleOfInvention | Gate of semiconductor device and manufacturing method thereof |
| abstract | The present invention discloses a gate of a semiconductor device and a method of forming the gate device capable of improving the reliability of the semiconductor device by securing a low and uniform sheet resistance when forming the gate to which the metal silicide film is applied. A gate of the disclosed semiconductor device includes a gate insulating film; A polysilicon film doped on the gate insulating film; An ohmic layer formed on the doped polysilicon film and formed of a metal silicide film; A first barrier film formed on a surface of the ohmic layer; A metal film formed on the first barrier film; A second barrier film formed on a surface of the metal film; And a protective film formed on the second barrier film. |
| priorityDate | 2006-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.