http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100894417-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L83-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L83-14 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L83-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-14 |
| filingDate | 2007-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2009-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100894417-B1 |
| titleOfInvention | Organosilane-based polymer for semiconductor fine gap fill with improved gap fill capability and composition for semiconductor fine gap fill using the same |
| abstract | The present invention relates to an organosilane-based polymer for semiconductor fine gap fill having excellent gap-fill capability and a composition comprising the same, wherein the aspect ratio is 70 nm or less according to the present invention, and the aspect ratio represented by height / diameter is 1 The general spin coating method for the semiconductor substrate having the above holes is possible in the wide molecular weight range without defects such as air voids, etc., and after the curing by baking, there is no residue in the hole by treating with hydrofluoric acid solution. It can be removed cleanly and provides a good composition with excellent storage stability.n n n n n n n Gap-fill, organosilane, spin coating, hydrofluoric acid, storage stability |
| priorityDate | 2007-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 64.