http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100894101-B1

Outgoing Links

Predicate Object
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
filingDate 2007-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2009-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2009-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100894101-B1
titleOfInvention Device Separating Method of Semiconductor Device
abstract A device isolation film forming method of a semiconductor device of the present invention includes forming a trench in a semiconductor substrate; Forming a liner layer on the exposed side of the trench; Forming a flowable insulating film filling the trench; Recessing the flowable insulating film; Forming a buffer film on the liner film of the trench sidewalls exposed by the recess; Performing etching on the buffer film to mitigate the rough surface of the liner film caused during the recess process; And depositing a trench in which the rough portion of the liner film surface is relaxed to the buried insulating film.n n n n Surface uniformity, fluid insulating film, buffer film
priorityDate 2007-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 29.