http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100882409-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31663 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-027 |
| filingDate | 2004-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2009-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100882409-B1 |
| titleOfInvention | Antireflection silicone resin, antireflection film material, antireflection film and pattern formation method using the same |
| abstract | The present invention provides a material of an antireflection film having a high etching selectivity with respect to a resist, that is, a high etching rate with respect to a resist, and a pattern formation method for forming an antireflection film layer on a substrate using the antireflection film material, and the reflection There is also provided a pattern formation method using the prevention film as a hard mask for substrate processing.n n n The present invention provides an antireflection silicon comprising an organic group having a carbon-oxygen single bond and / or a carbon-oxygen double bond, a light absorber, and a silicon atom whose terminal is Si-OH and / or Si-OR. Provide resin. Moreover, the antireflection film material containing the (A) silicone resin for antireflection film, (B) organic solvent, and (C) acid generator is provided.n n n n Anti-reflection film material, pattern formation method, hard mask |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10717878-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017126859-A1 |
| priorityDate | 2003-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.