http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100882289-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82B3-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82B3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2004-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2009-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100882289-B1 |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | A plurality of starting point patterns 3 containing a catalyst metal are formed above the semiconductor substrate 1. Next, the insulating film 4 covering the starting point pattern 3 is formed. Next, the groove | channel in which the side surface of the origin pattern 3 is exposed is formed in the insulating film 4 from both ends. Thereafter, the wiring is formed by growing the carbon nanotubes 5 having conductive chirality in the grooves. Thereafter, an interlayer insulating film covering the carbon nanotubes 5 is formed. n n Starting pattern, chirality, carbon nanotube, field effect transistor |
| priorityDate | 2007-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.