http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100881837-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0335 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2002-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2009-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100881837-B1 |
| titleOfInvention | Storage node contact formation method of semiconductor device |
| abstract | The present invention discloses a method for forming a storage node contact of a semiconductor device capable of preventing dishing in chemical mechanical polishing by depositing a buffer oxide layer on top of a bit line.n n n A method of forming a storage node contact of a semiconductor device according to the present invention includes: a first process of forming a bit line by stacking a metal line, a mask nitride film, and a buffer oxide film, and forming a spacer; A second process of applying an oxide layer over the entire surface, etching the region to form a storage contact node over the bit lines, and depositing polysilicon over the entire surface; Performing a chemical mechanical polishing to etch the buffer oxide film to form the oxide film and the polysilicon higher than the mask nitride film; And a fourth step of forming a storage node contact by polishing the oxide film and the polysilicon to the mask nitride film. The buffer oxide film has a faster chemical mechanical polishing rate than the oxide film and polysilicon. |
| priorityDate | 2002-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.