http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100875661-B1

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
filingDate 2007-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2008-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b0a2ee9ff763e30f4c25f9f7d84843a
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publicationDate 2008-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100875661-B1
titleOfInvention Semiconductor device manufacturing method
abstract The present invention is to provide a semiconductor device manufacturing method for increasing the pattern uniformity of the etched layer by preventing the deformation of the amorphous carbon film in the etching process using an amorphous carbon film as a hard mask film, for this purpose Forming an amorphous carbon film, doping carbon ions into the amorphous carbon film, patterning the amorphous carbon film, and etching the etched layer using the patterned amorphous carbon film as an etch barrier. The deformation of the mask layer, that is, the amorphous carbon layer, is prevented and thereby the pattern uniformity of the etching target layer is improved.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113078043-A
priorityDate 2007-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 28.