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filingDate 2008-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2008-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2008-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100874071-B1
titleOfInvention Manufacturing Method of Semiconductor Integrated Circuit Device
abstract In the process of manufacturing ultrapure water used for the manufacturing process of a semiconductor integrated circuit device, the ionized amine is prevented from flowing out to ultrapure water. A plurality of capillary-shaped hollow fiber membranes TYM formed of a polysulfone membrane, a polyimide membrane, or the like are disposed in the casing KOT, and both ends of the plurality of hollow fiber membranes TYM are bonded by thermal welding, and the hollow fiber membrane TYM is formed by the thermal welding. Is placed in the UF device, and the UF device is placed in the ultrapure water production system.n n n n Thermal welding, hollow fiber membrane, ultrapure water, amine
priorityDate 2001-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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