http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100873542-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0805 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate | 2004-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100873542-B1 |
| titleOfInvention | High Density Synthetic MIM Capacitors with Low Voltage Dependence in Semiconductor Dies |
| abstract | According to the disclosed embodiment, a composite MIM capacitor includes a bottom electrode of a bottom MIM capacitor disposed in a bottom interconnect metal layer of a semiconductor die. The composite MIM capacitor also includes an upper electrode of a lower MIM capacitor disposed within the lower interlayer dielectric, wherein the lower interlayer dielectric separates the lower interconnect metal layer from the upper interconnect metal layer. The bottom electrode of the top MIM capacitor is disposed in the top interconnect metal layer. The upper electrode of the upper MIM capacitor is in turn disposed in an upper interlayer dielectric disposed over the upper interconnect metal layer. The upper electrode of the lower MIM capacitor is connected to the lower electrode of the upper MIM capacitor while the lower electrode of the lower MIM capacitor is connected to the upper electrode of the upper MIM capacitor.n n n n Composite MIM Capacitors, Interlayer Dielectric, Interconnect Metal Layer, High-K Dielectric, Low-K Dielectric |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9245881-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010107772-A3 |
| priorityDate | 2003-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.