| abstract |
The semiconductor device includes a semiconductor device having a device region, a semiconductor film formed on the semiconductor substrate, and having a lamination film including a low dielectric constant insulating film and a laser processing groove formed to cut at least the low dielectric constant insulating film. The semiconductor element is connected to the wiring board via bump electrodes. An underfill material is filled between the semiconductor element and the wiring board. The fillet length Y (mm) of the underfill material satisfies the condition of Y> -0.233X + 3.5 (where X> 0, Y> 0) with respect to the width X (μm) of the laser processing groove.n n n n Laminated film, underfill material, laser cutting groove, bump electrode, fillet, film peeling |