http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100870264-B1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F9-7026
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
filingDate 2007-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2008-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bbf11cc22579175fc35fb96b3db144a4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89f4dc16250088068d2f48f3fa547a6a
publicationDate 2008-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100870264-B1
titleOfInvention Method of forming fine pattern of semiconductor device
abstract The present invention relates to a method of forming a fine pattern of a semiconductor device, comprising: forming an etching target layer, a first auxiliary layer, a separation layer, and a second auxiliary layer on a semiconductor substrate; Performing a process; performing a second exposure process by focusing on the second auxiliary layer; developing the second auxiliary layer to form a second auxiliary pattern; and etching the second auxiliary pattern. Etching the separator and the first auxiliary layer using an etching process to form a first auxiliary pattern, and removing the second auxiliary pattern and the separator remaining after etching the separator and the first auxiliary layer And developing the first auxiliary pattern to form a third auxiliary pattern, and etching the etch target layer using the third auxiliary pattern.
priorityDate 2007-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559581
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID297
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID4284
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419527140

Total number of triples: 22.