| abstract |
The present invention covers the outer surface of a wide gap semiconductor device with a synthetic polymer compound containing at least one silicon-containing polymer having a crosslinked structure by siloxane (Si-O-Si conjugate). The synthetic polymer compound has, for example, Si-R 1 , Si-OR 2, and Si-R 3 -OCOC (R 4 ) = CH 2 having one or two or more reactors (A ′) selected from the group. And a silicon-containing polymer whose weight average molecular weight 1000 or less component which has one or more crosslinked structure by Si-O-Si bond is 20 weight% or less. |