http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100868098-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823871 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02 |
| filingDate | 2007-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100868098-B1 |
| titleOfInvention | A manufacturing method of an integrated circuit device, a manufacturing method of a semiconductor element, and a semiconductor element manufactured thereby |
| abstract | A method of manufacturing an integrated circuit device and a circuit manufactured thereby are provided. A method of manufacturing an integrated circuit device includes forming first, second and third transistors in a semiconductor substrate, and covering the first and second transistors with a first electrical insulating film having internal stress characteristics to tension the channel region of the first transistor. Or compressive stress and cover the second and third transistors with a second electrical insulating film having internal stress characteristics to impart compressive or tensile stress to the channel region of the third transistor and extend toward the gate electrode side of the second transistor. Selectively removing the first region of the second electrical insulating layer to define a first opening extending through the second electrical insulating layer, and selectively defining a first region of the first electrical insulating layer extending toward the gate electrode side of the first transistor And at the same time selectively remove the second region of the second electrical insulating film extending to the gate electrode side of the third transistor. Removed, it involves defining a second aperture extending through the first opening and the second electrically insulating layer extending over the first electrically insulating film.n n n n Contacts, silicide films, compressive stress films, tensile stress films, semiconductor devices |
| priorityDate | 2007-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.