http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100864930-B1

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1146d1dc4ffd66d77c25805ca3f9a74f
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1339
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136
filingDate 2007-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2008-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e96920f8ef28cc4915f95c3fa5978d1
publicationDate 2008-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100864930-B1
titleOfInvention Manufacturing method of drive element for liquid crystal display element
abstract The present invention relates to a method for manufacturing a drive element for a liquid crystal display element comprising a transistor having a multilayer spacer. A manufacturing method according to an embodiment of the present invention, forming a gate insulating film and gate electrodes sequentially stacked on a semiconductor substrate; Sequentially depositing a first spacer material film, a second spacer material film, and a third spacer material film on the semiconductor substrate to cover the gate electrodes; Leaving the first, second and third spacer material films on sidewalls of the gate electrodes and leaving the first and second spacer material films on the semiconductor substrate by plasma dry etching for etch back etching; Removing the second spacer material film remaining on the semiconductor substrate by wet etching; And controlling the thickness of the first spacer material film.
priorityDate 2007-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 31.