http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100861172-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02362 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2007-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100861172-B1 |
| titleOfInvention | Method of forming fine pattern of semiconductor device |
| abstract | The present invention relates to a method for forming a fine pattern of a semiconductor device, comprising forming a first photoresist pattern on a semiconductor substrate on which an etched layer is formed, forming a silicon-containing polymer layer on the sidewalls of the first photoresist pattern, After removing the photoresist pattern to form a fine pattern made of a silicon-containing polymer layer, and then forming a second photoresist pattern partially connected to the fine pattern, using the fine pattern and the second photoresist pattern as an etching mask By etching the layer to be etched, the present invention relates to a method for forming a fine pattern having a line width smaller than the minimum line width that can be obtained with current exposure equipment. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104425225-A |
| priorityDate | 2006-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 87.