http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100858000-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02332 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2006-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100858000-B1 |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | The present invention relates to a semiconductor device and a manufacturing method thereof.n n n A semiconductor substrate having a source / drain region, a lightly doped drain (LDD) region, and a channel, a gate oxide pattern formed on the channel, a gate formed on the gate oxide pattern, side surfaces of the gate and gate oxide pattern, and on the LDD region An oxynitride pattern formed and a spacer formed on the oxynitride pattern,n n n Penetration of boron ions into the spacer in the low concentration source / drain region and boron ions into the spacer in the polysilicon pattern can be effectively prevented, thereby improving the electrical characteristics of the semiconductor device even with a simple process. . |
| priorityDate | 2006-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030057892-A |
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 16.