http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100857967-B1

Outgoing Links

Predicate Object
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
filingDate 2004-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2008-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2008-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100857967-B1
titleOfInvention Anti-reflection film material, anti-reflection film and pattern formation method using the same
abstract The present invention provides a material of an antireflection film having a high etching selectivity with respect to a resist, that is, a high etching rate with respect to a resist, and a pattern formation method for forming an antireflection film layer on a substrate using the antireflection film material, and the reflection There is also provided a pattern formation method using the prevention film as a hard mask for substrate processing.n n n The present invention provides a reflection containing (A) a polymer compound having a repeating unit by copolymerization represented by the following general formula (1) and / or the following general formula (2), (B) an organic solvent, (C) an acid generator, and (D) a crosslinking agent. Providing a protective film material.n n n <Formula 1>n n n n n n n n <Formula 2>n n n n n n n n n Anti-reflection film material, pattern formation method, hard mask
priorityDate 2003-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010019925-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20020036956-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002243905-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2002187422-A1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID466707411

Total number of triples: 26.