http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100852585-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2007-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100852585-B1 |
| titleOfInvention | Semiconductor device and manufacturing method of semiconductor device |
| abstract | The selectivity of the epitaxial growth method is improved. It has a gate electrode 12 formed on the Si substrate 10 which is a semiconductor substrate via the gate insulating film 11, and the insulating layer 17 containing the halogen element formed in the side surface of the gate electrode 12, It is characterized by the above-mentioned. A semiconductor device 100 is provided. In the semiconductor device 100, when the SiGe layer 14 is formed on the Si substrate 10, a silicon nitride film 17c containing a halogen element is formed on the side surface of the gate electrode 12. Thus, the SiGe layer 14 epitaxially grows on the Si substrate 10 with high selectivity. As a result, for example, the off-leak current generated between the gate electrode 12 and the source / drain region 13 is suppressed, and a manufacturing process suitable for actual mass production is established.n n n n Epitaxial, recessed, oxide, nitride, halogen |
| priorityDate | 2006-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.