| abstract |
This invention provides the manufacturing method of the ferroelectric layer by which the ferroelectric layer which has favorable orientation is obtained, for example in the manufacturing method of the ferroelectric layer of a stacked ferroelectric capacitor. The method of manufacturing the ferroelectric layer includes a step of forming the first ferroelectric layer 22 by a gas phase method on an upper side of a base, and a second ferroelectric layer 24 by a liquid phase method on an upper side of the first ferroelectric layer 22. It includes a step of forming a.n n n n Ferroelectric layer, capacitor, gas phase method, liquid phase method |