http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100846718-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2006-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100846718-B1 |
| titleOfInvention | Film deposition method using bias |
| abstract | Provided are a film deposition apparatus and a film deposition method capable of controlling deposition rates and film characteristics. The film deposition apparatus according to the present invention can apply a chamber into which a substrate is loaded, a gas supply system for introducing a reaction gas into the chamber, a filament for dissipating heat to dissociate the introduced reaction gas, and a constant alternating current and direct current voltage. And a bias introduction portion separate from the substrate, the bias being applied to at least one of the top, side, and bottom of the substrate using a voltage applied from the power source during deposition of the film on the substrate from the dissociated reactant gas. . The film deposition method according to the present invention may use such a film deposition apparatus or another film deposition apparatus, and the method of dissociating the reaction gas and applying a bias to the substrate during the deposition of the film on the substrate from the dissociated reaction gas. Include. According to the present invention, the generation behavior of charged nanoparticles from the reaction gas can be changed by the reaction conditions of the reaction gas, and at the same time, the charge characteristics of the charged particles once produced in the gas phase can be utilized. By applying a bias, the deposition behavior is also adjusted individually, thereby allowing the deposition rate and the film properties to be adjusted accordingly. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10038169-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101322865-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10944082-B2 |
| priorityDate | 2006-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.