| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b31896b0595e5629c470c80b74b2d2e4 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D1-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68714
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D3-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-448 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00 |
| filingDate |
2007-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2008-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9c9452b4b85e41cee07ba9b014fbe2b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49b2e66a4f7e821117d0381686e0b822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a53a3c36d9cf2d5d5bb2c04f2ed6e2d6 |
| publicationDate |
2008-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100845941-B1 |
| titleOfInvention |
Thin film manufacturing method having a low dielectric constant value and the thin film produced thereby |
| abstract |
The present invention relates to a method for forming a thin film having a low dielectric constant value through a post-heat treatment process using a RTA apparatus for a thin film formed by plasma polymerized, and more particularly, a rapid thermal annealing (RTA) process. It relates to a method for producing a low dielectric plasma polymer thin film using a post-heat treatment method.n n n The present invention comprises the steps of evaporating a precursor solution by evaporating a precursor comprising decamesylcyclopentasiloxane and cyclohexane in a bubbler, discharging the evaporated precursor from the bubbler and introducing it into a reactor for plasma deposition. And depositing a plasma-polymerized thin film on the substrate in the reactor using a plasma of the same, and then manufacturing a thin film having a low dielectric constant through an RTA post-heat treatment process.n n n The thin film according to the present invention prepared as described above is thermally stable and has a very low dielectric constant and is formed into a thin film structure having excellent mechanical properties, which is effective in producing a metal multilayer thin film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101015534-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101326254-B1 |
| priorityDate |
2007-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |