| abstract |
The present invention relates to a device having an ultrafine structure formed using a focused ion beam (FIB). In many cases, the structure takes the form of a plate upright on the substrate. Representative examples of devices according to the invention are field effect transistors and laser diodes, but the invention is not limited to such devices. Field effect transistors and laser diodes according to the invention have new functions or improved properties.n n n n Field effect transistors, laser diodes, optical devices, concentrated ion beams, MOSFETs, drain electrodes, gate insulating films |