http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100843552-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2b31f8612f522a744762d83c23879ba |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-889 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0272 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-611 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2007-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0c07ec32c06f8ed8ba4265fda738250 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89e79ccaab16a7402655d83106750199 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c62a1cefa1a64eb560aa89d98a082d96 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4691430407b8bfe779f3c6dc50d8aca3 |
| publicationDate | 2008-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100843552-B1 |
| titleOfInvention | Nano electrode wire manufacturing method using nano imprint process |
| abstract | The present invention relates to a method for producing a nano-electrode wire, the method of manufacturing a nano-electrode wire comprises the steps of sequentially forming an insulating film, a first photoresist layer and a second photoresist in the form of a drop (drop) on the substrate; Disposing an imprint mold having a plurality of molding patterns formed on the second photoresist; Pressing the mold to allow the second photoresist to flow into the mold pattern; Injecting the second photoresist into the mold pattern and curing the second photoresist by irradiating UV from the upper portion of the mold; Removing the mold formed on the cured second photoresist, and then patterning the second photoresist; Patterning the first photoresist layer using the patterned second photoresist as a mask; Patterning the insulating layer after patterning the first photoresist layer; And forming a metal layer between the first photoresist layer and the insulating layer and then patterning the insulating layer. Accordingly, by forming metal electrode lines between the insulating layers using an imprint process, crosstalk between metal electrode lines, which is the most problematic problem in the nanoelectronic device, can be eliminated. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180069921-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101906375-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101016215-B1 |
| priorityDate | 2007-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.