http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100841244-B1

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1259
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
filingDate 2006-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2008-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2008-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100841244-B1
titleOfInvention Photosensitive sensor and manufacturing method thereof
abstract The present invention relates to a light sensing sensor and a manufacturing method thereof, comprising: an amorphous silicon thin film transistor capable of sensing light; A storage capacitor capable of storing charges generated in the amorphous silicon thin film transistor; It consists of a photosensitive sensor consisting of a polycrystalline silicon thin film transistor for switching to move the charge stored in the storage capacitor.n n n Therefore, the present invention can reduce the size of the switching transistor and increase the size of the sensor transistor by using a polycrystalline silicon having a high charge transfer characteristics, the effect of improving the sensing characteristics There is.n n n n Fingerprint, sensor, thin film, transistor, polycrystalline, amorphous
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8445909-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11239286-B2
priorityDate 2006-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 28.