http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100838454-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5081169b8c991da399d70ac59c69101 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-208 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2006-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96db006eb7b4b7a4b4c87efe36f6d038 |
| publicationDate | 2008-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100838454-B1 |
| titleOfInvention | Pretreatment method of silicon wafer and method for evaluating point defect concentration using same |
| abstract | The present invention discloses a method for pretreatment of a silicon wafer and a method for evaluating point defect concentration using the same. Silicon wafer pretreatment method according to the invention, the step of depositing a metal thin film on the surface of the silicon wafer; Diffusing metal atoms of the metal thin film into the silicon wafer through low temperature heat treatment to contaminate the point defects inside the silicon wafer with the metal; Removing the metal thin film present on the surface of the silicon wafer; Etching the silicon wafer by vapor phase etching to form openings up to the point defect concentration evaluation point; And forming a Schottky contact on the bottom of the opening and forming an ohmic contact layer on the back surface of the silicon wafer.n n n According to the present invention, a sufficient level of metal contamination is possible, and the defect density of the wafer during the heat treatment is not changed, and since the opening is formed by chemical etching, it is possible to prevent the Schottky contact formation point from being contaminated. Level Transient Spectroscopy can improve the reliability of measurement results. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210152877-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102348438-B1 |
| priorityDate | 2006-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.