| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate |
2006-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2008-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7638fcf80878f3779aaf68a6f4f7294c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_274f46ec1e3a1e52224436a15fbaa79a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6da25cda52baf749cb9f3c710abc2a05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9412ad15095c5d1fb07417272f34ec51 |
| publicationDate |
2008-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100832106-B1 |
| titleOfInvention |
Manufacturing method of semiconductor device |
| abstract |
In forming an insulating film of a semiconductor device including a field oxide film, an insulating film is formed and a capping insulating film having a higher density than the insulating film is formed on the insulating film, followed by a chemical mechanical polishing process. Therefore, it is possible to provide a highly reliable semiconductor device by preventing scratches on the surface of the insulating film at the beginning of the chemical mechanical polishing process. |
| priorityDate |
2006-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |