http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100830997-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5081169b8c991da399d70ac59c69101 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02634 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02598 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2006-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95a21e25538eab0fa8290f072626e710 |
| publicationDate | 2008-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100830997-B1 |
| titleOfInvention | Silicon epitaxial wafer manufacturing method with improved flatness |
| abstract | A method of manufacturing a silicon epitaxial wafer with improved flatness is provided. In the silicon epitaxial wafer manufacturing method according to the present invention, the silicon epitaxial wafer manufacturing method comprising the step of depositing a silicon epitaxial layer on a silicon polished wafer (polished wafer), the silicon during the CVD deposition of the silicon epitaxial layer The final flatness is improved by adjusting the thickness profile of the epitaxial layer to compensate for the roll-off of the silicon polished wafer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101810643-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017135604-A1 |
| priorityDate | 2006-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.