http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100826725-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 |
| filingDate | 2001-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100826725-B1 |
| titleOfInvention | Abrasive composition for polishing semiconductor device and manufacturing method of semiconductor device using same |
| abstract | An abrasive composition for polishing a semiconductor device comprising water, abrasive fine particles and a chelating agent, wherein the abrasive is cerium oxide, the average particle diameter of the cerium oxide fine particles is 0.01 to 1.0 µm, and the polishing rate selection ratio of the silicon oxide film and the silicon nitride film is at least. It consists of 10 or more. As described above, the abrasive composition has a selectivity of 10 or more, so that planar polishing by high controllability is possible, and damage to the polishing surface is less, and the cleaning property against the abrasive grains generated from the wafer after polishing is also good. Therefore, it is used suitably as an abrasive composition for semiconductor device polishing at the time of grinding | polishing the oxide film for forming the shallow trench isolation structure which uses a silicon nitride as a stopper film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101464881-B1 |
| priorityDate | 2000-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 118.