http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100826389-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-24 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02647 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-04 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 |
| filingDate | 2006-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100826389-B1 |
| titleOfInvention | Nitride semiconductor selective growth method, nitride light emitting device and manufacturing method |
| abstract | The present invention provides a nitride semiconductor having a hexagonal pyramid structure having a mask having an opening on a nitride semiconductor layer, and having a crystal plane inclined with respect to an upper surface of the nitride semiconductor layer in the nitride semiconductor layer region exposed to the opening of the mask. And selectively growing a crystal, wherein the nitride semiconductor crystal of the hexagonal pyramid structure includes at least one intermediate separation region having a crystal plane having an inclination angle greater than the inclination angle of the crystal plane located above and below the hexagonal pyramid structure. The present invention also provides a nitride light emitting device that can be manufactured using the nitride semiconductor selective growth method described above, and a method of manufacturing the same.n n n n Nitride crystals, pyramids, light emitting diodes |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012124856-A1 |
| priorityDate | 2006-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.