http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100824637-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1146d1dc4ffd66d77c25805ca3f9a74f |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02153 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02362 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02107 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate | 2007-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cca8127bfc62c96378cbe65273a995ed |
| publicationDate | 2008-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100824637-B1 |
| titleOfInvention | NOR flash device and manufacturing method thereof |
| abstract | A NOR flash device and a method of manufacturing the same are disclosed. In this device having a back end of line (BEOL) structure, the BEOL structure includes a substrate having a conductive region, a first interlayer insulating film formed on the substrate, a first metal line formed on the conductive region, and a first metal line. And a second interlayer insulating film covering the first interlayer insulating film, a first contact penetrating the second interlayer insulating film, and a second metal line connected to the first metal line through the first contact. And at least one of the second metal lines is copper, and at least one of the first and second interlayer insulating films includes a low dielectric material. Therefore, as well, the time constant (RC) delay can not only be improved by more than 40% over the conventional application of USG and aluminum, but also low dielectric material due to oxygen strip damage or wet strips of trenches that occur while using low dielectric materials. Since no shrinkage or warpage of TiNN (4X50) is applied to the lower portion of aluminum, which is the third metal line, as a third diffusion barrier, copper diffusion of the aluminum pad can be removed in advance. |
| priorityDate | 2007-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 58.