http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100818658-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02189 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 2006-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_396c7c6033ca93d6feaa5278568531f2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a6d03ad2be45f44fadce64662e5767a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30b9692480596eff3075d4287c2e720d |
| publicationDate | 2008-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100818658-B1 |
| titleOfInvention | Multilayer dielectric and capacitor manufacturing method |
| abstract | The present invention implements an improvement in dielectric constant due to crystallization of ZrO 2 and improvement of leakage current characteristics due to amorphous HfO 2 , and a dielectric having a lower effective oxide thickness (Tox) than ZAZ, a manufacturing method thereof, a capacitor having the same, and a manufacturing method. To provide a method, the dielectric of the present invention is laminated in the order of a zirconium oxide film (having a tetragonal crystal phase), an aluminum oxide film and a hafnium oxide film to have a HAZ structure or a hafnium oxide film, an aluminum oxide film, and a zirconium oxide film. The present invention has a ZAH structure, and the present invention has the effect of sufficiently securing the charging capacity through the HAZ or ZAH dielectric and improving leakage current characteristics, thereby reducing the height of the storage node. |
| priorityDate | 2006-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.