http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100818396-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68714 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2006-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100818396-B1 |
| titleOfInvention | Plate chamber and copper wiring formation method of semiconductor device using same |
| abstract | The present invention is to form a copper wiring by using the electroplating method, for the purpose of the present invention, the oxidation occurs in the semiconductor wafer according to the time required for recovery in the event of equipment failure when moving from the plate chamber to the cleaning chamber Unlike, the semiconductor wafer seated on the wafer support located in the upper part of the plate chamber is precipitated in the electrolyte in the electrolytic cell, the voltage is applied to the copper electrode and the semiconductor wafer in the electrolytic cell, and the copper generated at the copper electrode according to the applied voltage. After the ions are deposited on the semiconductor wafer, the wafer support is raised to discharge the semiconductor wafer from the electrolyte, the semiconductor wafer is first cleaned, the wafer support is rotated to the first condition at a specific rotational speed, and the semiconductor wafer is first dried. , While moving from the plate chamber to the cleaning chamber The oxidation of the semiconductor wafer generated in the event of it that can be prevented in advance.n n n n Plate Chamber, Cleaning Chamber, Electroplating (ECP) |
| priorityDate | 2006-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.