http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100817718-B1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a17dc10b5bd6e5f0df2ce1aab3bbdce
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 2006-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2008-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9e9710c40b9f4abba8e04c6722c4dbb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbdd0965f659eb6451876a76e537210a
publicationDate 2008-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100817718-B1
titleOfInvention Semiconductor device manufacturing method
abstract A method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming an insulating layer having a contact on a semiconductor substrate, forming a through hole having a first depth in the insulating layer and the semiconductor substrate, and forming a metal layer on the resultant. Forming a through electrode to melt the metal constituting the metal layer through heat treatment with respect to the metal layer, forming a through electrode filling the through hole, and polishing the back surface of the semiconductor substrate to expose the through electrode.n n n In accordance with another aspect of the present invention, a method of manufacturing a semiconductor device includes forming a through hole having a first depth in a semiconductor substrate, forming a through electrode filling a through hole, and polishing a back surface of the semiconductor substrate. Exposing the electrode.
priorityDate 2006-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060084408-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100327326-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002237468-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100727261-B1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23985
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID482532689
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5359268
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419491804

Total number of triples: 23.