http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100811268-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0335 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 2006-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_286cd38665e8bdbb13a666563a4cd765 |
| publicationDate | 2008-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100811268-B1 |
| titleOfInvention | Storage electrode formation method of semiconductor device |
| abstract | Provided is a method of forming a storage electrode of a semiconductor device in which an effective surface area is increased at a limited storage electrode height and a defect such as a tilting pattern does not occur. The method for forming a storage electrode for this purpose includes forming an interlayer insulating film including a storage node contact on a semiconductor substrate, and forming an etch stop layer for preventing etching of the interlayer insulating film and the storage node contact on the interlayer insulating film. And forming a mold insulating film for imparting a shape of the storage electrode by alternately depositing a PSG film and a high density plasma (HDP) oxide film on the etch stop layer alternately at least once. Forming a hard mask layer for patterning the mold insulating layer, forming an opening exposing the storage node contact, and etching the mold insulating layer in the exposed region through the opening to form a curved storage electrode pattern. And forming a storage electrode along the curvature formed in the mold insulating film. Is done. |
| priorityDate | 2006-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.