http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100808694-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2006-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-02-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-02-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100808694-B1 |
| titleOfInvention | Cluster Tools and Methods for Process Integration in Photomask Manufacturing |
| abstract | Methods and apparatus for process integration in the manufacture of photomasks are disclosed. In one embodiment, a cluster tool suitable for process integration in the manufacture of a photomask includes a vacuum transfer chamber having at least one hard mask deposition chamber coupled thereto and at least one plasma chamber configured to etch chromium. In another embodiment, a method for process integration in the manufacture of a photomask includes depositing a hard mask on a substrate in a first processing chamber, depositing a resist layer on the substrate, patterning the resist layer Etching the hard mask through openings formed in the patterned resist layer in a second chamber, and etching the chromium layer through openings formed in the hard mask in a third chamber. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101145032-B1 |
| priorityDate | 2005-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.