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filingDate 2001-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2008-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2008-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100805545-B1
titleOfInvention Integrated circuit and single crystal semiconductor film formation method
abstract The present invention discloses a method of forming a single crystal semiconductor on an amorphous surface. According to the method, a template layer comprising an ordered array of nucleation sites is deposited on an amorphous surface, and a single crystal semiconductor film is formed on the amorphous surface from the ordered array of nucleation sites. . Also described are integrated circuits comprising one or more single crystal semiconductor layers formed by the present method.
priorityDate 2000-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 36.