| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3171
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3172
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26566
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-08 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J27-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-317 |
| filingDate |
2003-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2008-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2008-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100797138-B1 |
| titleOfInvention |
Complementary Metal Oxide Semiconductor Device, and Method of Forming Metal Oxide Semiconductor Device and Complementary Metal Oxide Semiconductor Device |
| abstract |
An ion implantation device and a method of manufacturing a semiconductor device are described, and ionized boron hydride molecular clusters are implanted to form a P-type transistor structure. For example, in the manufacture of complementary metal oxide semiconductor (CMOS) devices, clusters are implanted to provide P-type doping for the source and drain structures and polygates, and this doping step is crucial for forming PMOS transistors. Molecular cluster ions have the formulas B n H x + and B n H x − , where 10 ≦ n ≦ 100 and 0 ≦ x ≦ n + 4. |
| priorityDate |
2002-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |